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Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-09-07 , DOI: 10.1021/acsaelm.1c00398 Carsten Funck 1 , Stephan Menzel 2
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-09-07 , DOI: 10.1021/acsaelm.1c00398 Carsten Funck 1 , Stephan Menzel 2
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Memristive devices are two-terminal devices that can change their resistance state upon application of appropriate voltage stimuli. The resistance can be tuned over a wide resistance range enabling applications such as multibit data storage or analog computing-in-memory concepts. One of the most promising classes of memristive devices is based on the valence change mechanism in oxide-based devices. In these devices, a configurational change of oxygen defects, i.e. oxygen vacancies, leads to the change of the device resistance. A microscopic understanding of the conduction is necessary in order to design memristive devices with specific resistance properties. In this paper, we discuss the conduction mechanism proposed in the literature and propose a comprehensive, microscopic model of the conduction mechanism in this class of devices. To develop this microscopic picture of the conduction, ab initio simulation models are developed. These simulations suggest two different types of conduction, which are both limited by a tunneling through the Schottky barrier at the metal electrode contact. The difference between the two conduction mechanisms is the following: for the first type, the electrons tunnel into the conduction band and, in the second type, into the vacancy defect states. These two types of conduction differ in their current voltage relation, which has been detected experimentally. The origin of the resistive switching is identical for the two types of conduction and is based on a modification of the tunneling distance due to the oxygen vacancy induced screening of the Schottky barrier. This understanding may help to design optimized devices in terms of the dynamic resistance range for specific applications.
中文翻译：
氧化物基忆阻器件中电子传导的综合模型
忆阻器件是两端器件，可在施加适当的电压刺激后改变其电阻状态。电阻可以在很宽的电阻范围内进行调整，从而支持多位数据存储或模拟内存计算概念等应用。最有前途的一类忆阻器件是基于氧化物器件中的价态变化机制。在这些器件中，氧缺陷的构型变化，即氧空位，导致器件电阻的变化。为了设计具有特定电阻特性的忆阻器件，对传导的微观理解是必要的。在本文中，我们讨论了文献中提出的传导机制，并提出了此类器件中传导机制的综合微观模型。为了开发这种传导的微观图片，开发了从头算模拟模型。这些模拟表明有两种不同类型的传导，它们都受到金属电极接触处通过肖特基势垒的隧道效应的限制。两种传导机制之间的区别如下：对于第一种类型，电子隧道进入导带，而在第二种类型中，进入空位缺陷态。这两种传导类型的不同之处在于它们的电流电压关系，这已通过实验检测到。对于两种类型的传导，电阻开关的起源是相同的，并且基于由于肖特基势垒的氧空位诱导屏蔽而导致的隧道距离的修改。
更新日期：2021-09-28
中文翻译：
氧化物基忆阻器件中电子传导的综合模型
忆阻器件是两端器件，可在施加适当的电压刺激后改变其电阻状态。电阻可以在很宽的电阻范围内进行调整，从而支持多位数据存储或模拟内存计算概念等应用。最有前途的一类忆阻器件是基于氧化物器件中的价态变化机制。在这些器件中，氧缺陷的构型变化，即氧空位，导致器件电阻的变化。为了设计具有特定电阻特性的忆阻器件，对传导的微观理解是必要的。在本文中，我们讨论了文献中提出的传导机制，并提出了此类器件中传导机制的综合微观模型。为了开发这种传导的微观图片，开发了从头算模拟模型。这些模拟表明有两种不同类型的传导，它们都受到金属电极接触处通过肖特基势垒的隧道效应的限制。两种传导机制之间的区别如下：对于第一种类型，电子隧道进入导带，而在第二种类型中，进入空位缺陷态。这两种传导类型的不同之处在于它们的电流电压关系，这已通过实验检测到。对于两种类型的传导，电阻开关的起源是相同的，并且基于由于肖特基势垒的氧空位诱导屏蔽而导致的隧道距离的修改。
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