Tin oxide films with thicknesses in the range from 5 to 110 nm have been deposited by reactive dc magnetron sputtering of Sn in Ar + O plasma at a low working pressure of 1.0× 10⁻³ Torr on glass substrates at different temperatures (150–400 °C). The effect of deposition time, substrate temperature, and oxygen partial pressure on surface morphology, crystallographic structure, optical properties, and photoluminescence characteristics of SnO₂ films has been studied and correlated with their defect structure. The structural transformation from nanocrystalline to polycrystalline of thicker films >40 nm and films were grown at higher temperature is explained based on adatom mobility and uniform substrate coverage. Based on photoluminescence characteristics and transmittance spectra, the 20 nm thick film exhibits the least defect structure and best electronic and optical behaviors.

在1.0×10 ^-3  Torr的低工作压力下，在不同温度 (150-400 ℃）。研究了沉积时间、衬底温度和氧分压对 SnO ₂薄膜的表面形貌、晶体结构、光学性质和光致发光特性的影响，并与它们的缺陷结构相关联。基于adatom解释了从纳米晶到多晶的> 40 nm厚膜以及在更高温度下生长的膜的结构转变移动性和均匀的基板覆盖率。基于光致发光特性和透射光谱，20 nm 厚的薄膜表现出最少的缺陷结构和最好的电子和光学行为。