This paper presents experimental and numerical analysis of a buried P-pillar (BP) lateral double-diffused metal-oxide semiconductor (LDMOS) fabricated on a silicon-on-insulator (SOI) substrate. The experimental results indicate that the specific on-resistance ( R on,sp) of the SOI BP-LDMOS is 9.5 mΩ· cm2 with a breakdown voltage (BV) of 229 V, which corresponds to a figure of merit (FOM) of 5.52 MW/cm2. The analysis of structural parameter optimization of the SOI BP-LDMOS under different doping concentrations in the drift region and P-pillar layer is conducted via numerical simulation. The results show that the tested sample can achieve about 80% of the maximal FOM. Finally, the experimental and numerical investigation of the total ionizing dose (TID) radiation effect on the BV shift is performed. The TID tolerance of the measured SOI BP-LDMOS can reach 300 krad(Si) to support a voltage of 200 V. Due to the electric field modulation hardening design, compared with the conventional hardened SOI LDMOS, the studied hardened BP-LDMOS can achieve a significant improvement in the TID tolerance from 225 krad(Si) to 525 krad(Si).

中文翻译：

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TID辐射对埋入式P柱SOI LDMOSFET击穿电压影响的研究


本文介绍了在绝缘体上硅 (SOI) 衬底上制造的埋入式 P 柱 (BP) 横向双扩散金属氧化物半导体 (LDMOS) 的实验和数值分析。实验结果表明，SOI BP-LDMOS的比导通电阻(R on,sp)为9.5 mΩ·cm2，击穿电压(BV)为229 V，对应的品质因数(FOM)为5.52兆瓦/平方厘米。通过数值模拟对SOI BP-LDMOS在漂移区和P柱层不同掺杂浓度下的结构参数优化进行了分析。结果表明，测试样品可以达到最大FOM的80%左右。最后，对总电离剂量（TID）辐射对 BV 偏移的影响进行了实验和数值研究。实测SOI BP-LDMOS的TID容差可以达到300 krad(Si)，支持200 V电压。由于采用了电场调制硬化设计，与传统硬化SOI LDMOS相比，所研究的硬化BP-LDMOS可以实现TID 容差从 225 krad(Si) 显着提高到 525 krad(Si)。