In this work, three MISHEMT devices with different electric-field-dispersion layer (EDL) behave the same pristine electrical properties. EDL, which is low dielectric constant (low-k), can effectively disperse electric field, which enhances breakdown voltage and improves reliability in MISHEMT. In a comparison of devices with high-k and low-k EDL, the on-state current ( $\text{I}_{\mathrm{ on}}$ ) of the high-k EDL devices is more significantly reduced than low-k EDL devices after off-state stress. A model for the dispersion of electric fields by the EDL is proposed for this interesting phenomenon. The distribution of the electric field is verified by Silvaco electric field simulation. Finally, the breakdown voltages of the three devices were measured, confirming that the devices with a low-k EDL can increase their breakdown voltages by an additional 600 V, which is 250 % higher than that in the high-k EDL device.

中文翻译：

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通过电场色散层材料选择提高 AlGaN/GaN 金属-绝缘体-半导体 HEMT 的击穿电压

在这项工作中，三个具有不同电场色散层 (EDL) 的 MISHEMT 器件表现出相同的原始电气特性。EDL 是低介电常数（low-k），可以有效地分散电场，从而提高击穿电压并提高 MISHEMT 的可靠性。在比较具有高 k 和低 k EDL 的器件时，通态电流 ( $\text{I}_{\mathrm{ on}}$ ) 的高 k EDL 器件比低 k EDL 器件在断态应力后更显着降低。针对这种有趣的现象，提出了 EDL 电场分散模型。Silvaco 电场模拟验证了电场的分布。最后，测量了三种器件的击穿电压，证实具有低 k EDL 的器件可以将其击穿电压额外增加 600 V，比高 k EDL 器件高 250%。