The reverse breakdown characteristics of 4H-SiC Junction Barrier Schottky (JBS) rectifiers adopting the different floating limiting rings (FLRs) termination structures are experimented and analyzed under the repetitive avalanche current stress. The experimental results indicate that the breakdown voltage (BV) shift of the device after the repetitive avalanche current stress is highly dependent on the FLRs design, which determines the distributions of the surface electric field and avalanche current at avalanche condition. It is proved that the uniform surface electric field distribution of the FLRs structure at avalanche condition is helpful for the device achieve to achieve better BV shift robustness on the repetitive avalanche current stress. Additionally, the FLRs structure, which has smaller S1 and enough Nr, can present both higher BV and excellent BV shift robustness on the repetitive avalanche current stress.

中文翻译：

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4H-SiC JBS 整流器在重复雪崩电流应力下浮动限流环端接分析


对采用不同浮动限流环（FLR）端接结构的4H-SiC结势垒肖特基（JBS）整流器在重复雪崩电流应力下的反向击穿特性进行了实验和分析。实验结果表明，重复雪崩电流应力后器件的击穿电压（BV）偏移高度依赖于FLR设计，FLR设计决定了雪崩条件下表面电场和雪崩电流的分布。事实证明，雪崩条件下FLRs结构均匀的表面电场分布有助于器件在重复雪崩电流应力下获得更好的BV漂移鲁棒性。此外，FLRs结构具有较小的S1和足够的Nr，可以在重复雪崩电流应力下表现出较高的BV和优异的BV漂移鲁棒性。