Device reliability predictions of the low-k amorphous dielectric material SiCOH using its negative magnetoresistance (MR) is demonstrated herein. The magnitude of the MR is related to the density of defects at the interface and within the bulk of the dielectric material. Moreover, the mean-free path of carriers in the bulk dielectric material within the conduction band is increased in the presence of an applied external magnetic field due to the electron spin-polarization relaxation time modification cooperative effect resulting in suppression of the formation of singlet states and trap-mediated spin-singlet state pair hopping due to carrier spin constraints supporting triplet states with a concomitant rise in current in the conduction band. Interelectrode charge carrier conduction due to trap states within the bulk of the material leading to dielectric breakdown is a major detractor in insulators. A direct correlation is shown between the MR in the amorphous dielectric material SiCOH (a-SiCOH) and failure rates of the insulator in time-dependent dielectric breakdown (TDDB) material lifetimes.

中文翻译：

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使用磁阻作为诊断工具的低 k 电介质的可靠性表征

本文展示了使用其负磁阻 (MR) 对低 k 非晶介电材料 SiCOH 进行的器件可靠性预测。MR 的大小与界面处和介电材料主体内的缺陷密度有关。此外，由于电子自旋极化弛豫时间修改协同效应，在施加外部磁场的情况下，导带内体介电材料中载流子的平均自由路径增加，从而抑制单线态的形成由于载流子自旋约束支持三重态，同时导带中的电流上升，因此陷阱介导的自旋-单重态对跳跃。由于材料主体内的陷阱态导致的电极间电荷载流子传导导致介电击穿是绝缘体的主要缺点。在非晶介电材料 SiCOH (a-SiCOH) 中的 MR 与绝缘体在时间相关的介电击穿 (TDDB) 材料寿命中的故障率之间显示了直接相关性。