The reliability of the integrated circuits (ICs) has become one of the greatest challenges with the increasing complexity of the electromagnetic environment. On this basis, an explicit difference in the damage location is observed in the high-power microwave (HPM) radiated CMOS inverters. The detailed damage mechanism analysis is performed. The analysis shows that the overcurrent-dominant failure and the latch-up-dominant failure are induced in positive and negative half radiation cycle respectively, resulting in the damage location discrepancy. The depletion region current ISSI_{\textrm {SS}} and the body current IbodyI_{\textrm {body}} are derived from the established theoretical charge transport model. TCAD simulations demonstrate the junctional-overcurrent and latch-up process, empirical formula is obtained to explain the damage mechanism and predict the thermal damage location. The damage dependency on interference characteristics is discussed for further understanding. Corresponding experiments are performed using the six-integrated-inverters chip. The results support the theoretical charge transport model well.

中文翻译：

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高功率微波辐射CMOS电路的机理分析与热损伤预测


随着电磁环境的日益复杂，集成电路（IC）的可靠性已成为最大的挑战之一。在此基础上，在高功率微波 (HPM) 辐射 CMOS 逆变器中观察到损坏位置的明显差异。进行了详细的损伤机理分析。分析表明，过流主导型失效和闩锁主导型失效分别在正半辐射周期和负半辐射周期引起，导致损伤位置不一致。耗尽区电流 ISSI_{\textrm {SS}} 和体电流 IbodyI_{\textrm {body}} 由建立的理论电荷传输模型导出。 TCAD仿真演示了结点过流和闩锁过程，获得经验公式来解释损坏机制并预测热损坏位置。为了进一步理解，讨论了损坏对干扰特性的依赖性。利用六集成逆变器芯片进行了相应的实验。结果很好地支持了理论电荷传输模型。