Imprint, the preferential orientation of the polarization of a ferroelectric device subjected to elevated temperatures, is a primary reliability concern afflicting data retention in ferroelectric RAM. In this paper, we demonstrate Preisach-based hysteresis modeling, which can be used to predict imprint behavior in ferroelectric thin films. A method was developed for capturing imprint in the context of a Preisach model and a numerical approach for evaluating the Preisach distribution was expanded upon. Interpolation and curve fitting were used to make predictions of the Preisach distributions of imprinted ferroelectric hafnium zirconium oxide devices after short-duration bakes at 23–260 °C and long-term bakes at 85 and 125 °C. In the case of long-term bakes, imprint-induced coercive shifts were modeled as shifts in the derivative of the top and bottom hysteretic polarization curves. The shift in the curves is modeled by fitting experimental data to a commonly used empirically logarithmic relationship reported in the literature. Simulations give remanent polarizations and coercive fields within <5.0 μC/cm² and 0.1 V, respectively, of the raw data average.

中文翻译：

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铪锆氧化物铁电电容器印记的 Preisach 模型

印记是铁电器件在高温下极化的优先取向，是影响铁电 RAM 中数据保留的主要可靠性问题。在本文中，我们展示了基于 Preisach 的滞后建模，该建模可用于预测铁电薄膜中的压印行为。开发了一种在 Preisach 模型背景下捕获印记的方法，并扩展了评估 Preisach 分布的数值方法。使用插值法和曲线拟合来预测压印铁电铪氧化锆器件在 23-260°C 下短期烘烤和在 85 和 125°C 下长期烘烤后的 Preisach 分布。在长期烘烤的情况下，压印引起的矫顽力偏移被建模为顶部和底部磁滞极化曲线的导数的偏移。曲线的移动是通过将实验数据拟合到文献中报道的常用经验对数关系来建模的。模拟给出了 <5.0 以内的剩余极化和矫顽场 分别为原始数据平均值的μ C/cm ²和 0.1 V。