This paper presents the numerical evaluation of different multiphotonic absorption mechanisms to be used for backside laser testing of single-event effects in GaN-on-Si HEMTs. The optical transmission through the complete stack of layers of three commercial references is calculated. Experimental results illustrating the possibility to use three-photon absorption for charge injection in the GaN layer are presented. The possible contribution of higher-order optical absorption in the buffer layers is discussed.

中文翻译：

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用于 SEE 测试的 GaN-on-Si HEMT 中通过多光子吸收的电荷注入建模

本文介绍了不同多光子吸收机制的数值评估，用于背面激光测试 GaN-on-Si HEMT 中的单事件效应。计算通过三个商业参考的完整层堆栈的光传输。实验结果说明了在 GaN 层中使用三光子吸收进行电荷注入的可能性。讨论了缓冲层中高阶光吸收的可能贡献。