Nanocrystalline (NC) tin dioxide (SnO₂) thin film has been prepared using chemical bath method at low working temperature onto SiO₂/Si substrates. The structural and morphological properties were studied through X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The as-deposited thin film appeared with tetragonal rutile structure. The crystallization of SnO₂ film was achieved when the film was exposed to anneal at 500∘C. NC SnO₂ thin film was successfully utilized as an extended gate field-effect transistor (EGFET) pH sensing. NC SnO₂ film based pH-EGFET sensor displayed a notable pH sensing performance, where the sensitivity and the linearity values are equal to 25.7 (mV/pH) and 0.8489 within 2–12 range consecutive. The NC SnO₂ thin film sensor has shown good pH sensor stability and reliability; thus it can be considered the best choice for flexible and disposable biosensors.

中文翻译：

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化学浴法制备的 SnO2 薄膜基 EGFET 的新型 pH 敏感性

纳米晶 (NC) 二氧化锡 (SnO ₂ ) 薄膜已在低工作温度下使用化学浴法在 SiO ₂ /Si 衬底上制备。通过 X 射线衍射 (XRD) 和场发射扫描电子显微镜 (FESEM) 研究了结构和形态特性。所沉积的薄膜呈四方金红石结构。SnO ₂薄膜的结晶化是在薄膜暴露于退火温度时实现的。500∘C. NC SnO ₂薄膜成功用作扩展栅极场效应晶体管 (EGFET) pH 传感。基于NC SnO ₂薄膜的 pH-EGFET 传感器显示出显着的 pH 传感性能，其中连续 2-12 范围内的灵敏度和线性值等于 25.7 (mV/pH) 和 0.8489。NC SnO ₂薄膜传感器表现出良好的pH传感器稳定性和可靠性；因此它可以被认为是柔性和一次性生物传感器的最佳选择。