In the present study, the nonlinear optical rectification (NOR), second harmonic generation (SHG), and third harmonic generation (THG) coefficients in GaAs/GaAlAs quantum well (QW) with exponentially confinement potential were theoretically analyzed for different applied static electric and magnetic fields as well as the non-resonant intense laser field (ILF). In addition, the effect of adjustable physical parameters (\(\upeta \) and \(\upkappa \)) on the optical properties was also investigated. The subband energy levels and their corresponding envelope wave functions of an electron confined in a QW with exponentially confinement potential are calculated by diagonalization method within the framework of effective mass and single parabolic band approximations. The analytical expressions of the NOR, SHG, and THG are obtained using compact density matrix approach via iterative method. The numerical results show that the applied external fields and physical parameters have a great effect on the optical characteristics of the considered system. In particular, we have found the applied external fields have a significant effect on the position and magnitude of resonant peaks of NOR, SHG, and THG.

在本研究中，从理论上分析了具有指数限制电位的 GaAs/GaAlAs 量子阱 (QW) 中的非线性光学整流 (NOR)、二次谐波产生 (SHG) 和三次谐波产生 (THG) 系数，适用于不同的施加静电和磁场以及非共振强激光场 (ILF)。另外，可调物理参数（\(\upeta\)和\(\upkappa\)) 的光学特性也进行了研究。在有效质量和单抛物线带近似的框架内，通过对角化方法计算了限制在具有指数限制势的 QW 中的电子的子带能级及其相应的包络波函数。NOR、SHG和THG的解析表达式是通过迭代方法使用紧密度矩阵方法获得的。数值结果表明，施加的外场和物理参数对所考虑系统的光学特性有很大影响。特别是，我们发现施加的外场对 NOR、SHG 和 THG 的共振峰的位置和幅度有显着影响。