Reports on the influence of the stress on giant magnetoimpedance (GMI) effect of CoFeSiB films are rarely seen. Therefore, the influence of stress on the GMI effect of CoFeSiB thin-film was studied in this investigation. Firstly, to select suitable substrates for applying stress, CoFeSiB films were fabricated on different flexible substrates with magnetron sputtering, and the hysteresis loops of the films were measured. The results show that the magnetic properties of the films on polyester (PET) substrates and silicate flexible glass are similar and better than polyimide (PI). So they are candidate materials for flexible substrates. And then, the GMI curves of the films under different stresses were measured. The results show that applying longitudinal tensile stress would reduce the longitudinal anisotropy and weaken the GMI effect of the CoFeSiB film. The research on the influence of stress on GMI thin-film would be helpful to fabricate flexible GMI sensors of stable performance.

关于应力对 CoFeSiB 薄膜巨磁阻抗 (GMI) 效应影响的报道很少见。因此，本研究研究了应力对 CoFeSiB 薄膜 GMI 效应的影响。首先，为了选择合适的衬底施加应力，利用磁控溅射在不同的柔性衬底上制备CoFeSiB薄膜，并测量薄膜的磁滞回线。结果表明，聚酯 (PET) 基材和硅酸盐柔性玻璃上的薄膜的磁性能与聚酰亚胺 (PI) 相似且优于聚酰亚胺 (PI)。因此它们是柔性基板的候选材料。然后，测量了薄膜在不同应力下的 ​​GMI 曲线。结果表明，施加纵向拉应力会降低纵向各向异性并削弱 CoFeSiB 薄膜的 GMI 效应。应力对GMI薄膜影响的研究将有助于制造性能稳定的柔性GMI传感器。