Performance improvement of planar silicon heterojunction solar cells via sandwich-like p-type emitters,Applied Physics A

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Performance improvement of planar silicon heterojunction solar cells via sandwich-like p-type emitters
Applied Physics A ( IF 2.5 ) Pub Date : 2021-09-04 , DOI: 10.1007/s00339-021-04883-1
Jiakai Zhou _{1,

2,

3,

4} , Boyu Zhang _{1,

2,

3,

4} , Junfan Chen _{1,

2,

3,

4} , Huizhi Ren _{1,

2,

3,

4} , Qian Huang _{1,

2,

3,

4} , Xiaodan Zhang _{1,

2,

3,

4} , Guofu Hou _{1,

2,

3,

4} , Ying Zhao _{1,

2,

3,

4}

Affiliation

The emitter is one of the most crucial issues to achieve high-performance silicon heterojunction (SHJ) solar cells. In this work, we study the effects of single-layer and multi-layer p-type emitters, including boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) and/or boron-doped hydrogenated nanocrystalline silicon oxide (nc-SiO_X:H) films, on the device performance of SHJ solar cells. The results demonstrate that the sandwich-like p-type emitters of p-nc-Si:H/p-nc-SiO_X:H/p⁺-nc-Si:H have the potential to become an effective and efficient candidate to result in higher efficiency. The lightly boron-doped p-nc-Si:H is used to reduce the incubation layer thickness in the initial stage of growth, while the low parasitic absorption of the p-nc-SiO_X:H emitter leads to an increase in short-circuit current. Moreover, a highly boron-doped p⁺-nc-Si:H layer is implemented on top of the p-nc-SiO_X:H to get a lower series resistance (R_s) and higher fill factor. Lastly, we achieve a champion SHJ solar cell on planar wafer with an open-circuit voltage of 678.2 mV, a short-circuit current density of 36.6 mA/cm², a fill factor of 77% and a conversion efficiency of 19.11%.Kindly check and confirm the ON for the affiliation 1 and 2.We confirm the accuracy of the affiliations.

Graphic abstract

中文翻译：

通过类似三明治的 p 型发射器改善平面硅异质结太阳能电池的性能

发射极是实现高性能硅异质结 (SHJ) 太阳能电池的最关键问题之一。在这项工作中，我们研究了单层和多层 p 型发射极的影响，包括掺硼氢化纳米晶硅 (nc-Si:H) 和/或掺硼氢化纳米晶氧化硅 (nc-SiO _X :H) 薄膜，关于 SHJ 太阳能电池的器件性能。结果表明，p-nc-Si:H/p-nc-SiO _X :H/p ⁺ -nc-Si:H的三明治状 p 型发射极有可能成为有效且高效的候选物在更高的效率。轻掺杂硼的 p-nc-Si:H 用于降低生长初期的孵化层厚度，而 p-nc-SiO 的低寄生吸收_X :H 发射极导致短路电流增加。此外，在 p-nc-SiO _X :H之上实施了高度硼掺杂的 p ⁺ -nc-Si:H 层，以获得更低的串联电阻 ( R _s ) 和更高的填充因子。最后，我们在平面晶圆上实现了冠军 SHJ 太阳能电池，开路电压为 678.2 mV，短路电流密度为 36.6 mA/cm ²，填充因子为 77%，转换效率为 19.11%。检查并确认隶属关系 1 和 2 的 ON。我们确认隶属关系的准确性。

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更新日期：2021-09-06

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