Double-layer films of ZnO and antimony doped tin oxide (ATO) have great potential for application in photoelectric devices by the integration of the ultraviolet (UV) absorbance of the ZnO layer and the near-infrared (NIR) blocking and conductivity induced by the ATO film. Thus the nanostructure of ATO film on the surface of the ZnO layer plays an important role in determining the photoelectric property of ZnO/ATO bilayer film. In this work, ATO films are deposited on the ZnO layer by a radio frequency magnetron sputtering method and the structures and photoelectric properties, particularly the electric properties of ATO films on the ZnO layer are investigated by the regulation of gas flow ratio of O₂/Ar and the sputtering power. After optimization of the conditions depositing ATO films on the ZnO layer, which is at an O₂/Ar ratio of 2:13 with sputtering power of 150 W, ATO film shows a good conductivity of about 213.4 Scm⁻¹ after annealing in nitrogen at 500 °C for 1 h. The double-layer film of 500 nm ATO film on 200 nm thick ZnO layer presents good optical properties with a high UV-blocking of 96% (280–380 nm), a NIR-blocking of 80% (1100–2500 nm) and light transmission of about 70% (380–1100 nm).

ZnO 和掺锑氧化锡 ​​(ATO) 的双层薄膜通过将 ZnO 层的紫外 (UV) 吸收与近红外 (NIR) 阻挡和导电性相结合，在光电器件中具有巨大的应用潜力。 ATO膜。因此，ZnO层表面ATO薄膜的纳米结构在决定ZnO/ATO双层薄膜的光电性能方面起着重要作用。本工作采用射频磁控溅射法在ZnO层上沉积ATO薄膜，通过调节O ₂的气体流量比，研究了ZnO层上ATO薄膜的结构和光电性能，特别是电性能。/Ar 和溅射功率。优化在 ZnO 层上沉积 ATO 薄膜的条件后，O ₂ /Ar 比为 2:13，溅射功率为 150 W，ATO 薄膜在氮气中退火后显示出良好的电导率，约为 213.4 Scm ^-1 500°C 1 小时。200 nm 厚的 ZnO 层上的 500 nm ATO 薄膜的双层薄膜具有良好的光学性能，具有 96% (280–380 nm) 的高紫外线阻挡率、80% (1100–2500 nm) 的 NIR 阻挡率和透光率约为 70% (380–1100 nm)。