Gd₂GaSbO₇:Cr³⁺,Yb³⁺ phosphors with efficient broadband NIR emission were prepared by a solid-state reaction. Under the excitation of 448 nm, the Gd₂GaSbO₇:Cr³⁺ (GGS:Cr³⁺) phosphor exhibits a broadband NIR emission band centered at approximately 770 nm with a full width at half maximum (FWHM) of 160 nm. In addition, Yb³⁺ codoping can distinctly improve the photoluminescence properties of the GGS:Cr³⁺ phosphor, leading to broadening of the FWHM and greatly enhancing the thermal stability of the phosphor. Moreover, the energy conversion process of Cr³⁺ → Yb³⁺ ions was analyzed in detail, demonstrating that the energy transfer mechanism conformed to electric dipole–dipole interaction. The NIR pc-LEDs assembled with the GGS:Cr³⁺ phosphor and blue LED chips possessed a maximum NIR output power of ∼21 mW at 100 mA driving current, indicating promising applications of the synthesized phosphor in NIR pc-LEDs.

中文翻译：

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用于宽带近红外应用的高度热稳定的 Cr3+ 和 Yb3+ 共掺杂 Gd2GaSbO7 荧光粉

通过固态反应制备了具有高效宽带 NIR 发射的Gd ₂ GaSbO ₇ :Cr ³⁺ ,Yb ³⁺荧光粉。在 448 nm 的激发下，Gd ₂ GaSbO ₇ :Cr ³⁺ (GGS:Cr ³⁺ ) 荧光粉表现出以大约 770 nm 为中心的宽带 NIR 发射带，半峰全宽 (FWHM) 为 160 nm。此外，Yb ³⁺共掺杂可以显着改善GGS:Cr ³⁺荧光粉的光致发光性能，导致半高宽变宽并大大提高荧光粉的热稳定性。此外，Cr ³⁺ → Yb的能量转换过程详细分析了³⁺离子，证明能量转移机制符合电偶极-偶极相互作用。组装有 GGS:Cr ³⁺荧光粉和蓝色 LED 芯片的 NIR pc-LED在 100 mA 驱动电流下具有 ~21 mW 的最大 NIR 输出功率，表明合成的荧光粉在 NIR pc-LED 中的应用前景广阔。