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Crystal growth, optical, thermal and piezoelectric properties of HoCa4O(BO3)3 crystal
CrystEngComm ( IF 2.6 ) Pub Date : 2021-08-20 , DOI: 10.1039/d1ce00816a
Pingzhang Yu 1 , Xiaobo Pan 1 , Guangda Wu 1 , Yanqing Liu 2 , Fapeng Yu 1 , Zhengping Wang 1 , Xinguang Xu 1
Affiliation  

Large size HoCa4O(BO3)3 (HoCOB) crystal was successfully grown by the Czochralski (Cz) method. Through single-crystal X-ray diffraction the cell parameters were determined to be a = 8.090(3) Å, b = 16.018(7) Å, c = 3.5317(14) Å, β = 101.28°(4) and Z = 2 with the space group Cm. The Archimedes method was used to measure the density which was 3.85 g cm−3. In the transmittance spectrum of HoCOB, there are strong absorption peaks from 200 to 680 nm and 1800 to 2200 nm, corresponding to the Stokes levels between 13 219 and 49 335 cm−1. The thermal and the piezoelectric properties were investigated under different temperatures. At 300 K around, the thermal expansion coefficient, thermal conductivity, specific heat, and relative dielectric constant on the b axis direction (i.e. the unique two-fold axis direction) were 5.35 × 10−6 K−1, 2.18 W m−1 K−1, 0.58 g−1 K−1, and 12.5, respectively.

中文翻译:

HoCa4O(BO3)3晶体的晶体生长、光学、热学和压电特性

大尺寸的HoCa 4 O(BO 3 ) 3 (HoCOB) 晶体通过直拉法(Cz) 方法成功生长。通过单晶 X 射线衍射确定电池参数为a = 8.090(3) Å, b = 16.018(7) Å, c = 3.5317(14) Å, β = 101.28°(4) 和Z = 2与空间群Cm。使用阿基米德法测量密度为3.85 g cm -3。在HoCOB的透射光谱中,在200~680 nm和1800~2200 nm有强吸收峰,对应的斯托克斯能级在13 219~49 335 cm -1. 研究了不同温度下的热和压电性能。在300 K附近,b轴方向(唯一的二重轴方向)上的热膨胀系数、热导率、比热和相对介电常数分别为5.35×10 -6 K -1、2.18 W m -1 K -1、0.58 g -1 K -1和12.5 分别。
更新日期:2021-09-06
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