当前位置：
X-MOL 学术
›
Adv. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Localized Graphitization on Diamond Surface as a Manifestation of Dopants
Advanced Materials ( IF 27.4 ) Pub Date : 2021-09-06 , DOI: 10.1002/adma.202103250 Francesca Celine I Catalan 1 , Le The Anh 2 , Junepyo Oh 1 , Emiko Kazuma 1 , Norihiko Hayazawa 1 , Norihito Ikemiya 3 , Naoki Kamoshida 3 , Yoshitaka Tateyama 2 , Yasuaki Einaga 3 , Yousoo Kim 1
Advanced Materials ( IF 27.4 ) Pub Date : 2021-09-06 , DOI: 10.1002/adma.202103250 Francesca Celine I Catalan 1 , Le The Anh 2 , Junepyo Oh 1 , Emiko Kazuma 1 , Norihiko Hayazawa 1 , Norihito Ikemiya 3 , Naoki Kamoshida 3 , Yoshitaka Tateyama 2 , Yasuaki Einaga 3 , Yousoo Kim 1
Affiliation
|
Doped diamond electrodes have attracted significant attention for decades owing to their excellent physical and electrochemical properties. However, direct experimental observation of dopant effects on the diamond surface has not been available until now. Here, low-temperature scanning tunneling microscopy is utilized to investigate the atomic-scale morphology and electronic structures of (100)- and (111)-oriented boron-doped diamond (BDD) electrodes. Graphitized domains of a few nanometers are shown to manifest the effects of boron dopants on the BDD surface. Confirmed by first-principles calculations, local density of states measurements reveal that the electronic structure of these features is characterized by in-gap states induced by boron-related lattice deformation. The dopant-related graphitization is uniquely observed in BDD (111), which explains its electrochemical superiority over the (100) facet. These experimental observations provide atomic-scale information about the role of dopants in modulating the conductivity of diamond, as well as, possibly, other functional doped materials.
中文翻译：
金刚石表面的局部石墨化作为掺杂剂的表现
几十年来，掺杂金刚石电极因其优异的物理和电化学性能而备受关注。然而，直到现在还没有对金刚石表面掺杂剂效应的直接实验观察。在这里，低温扫描隧道显微镜用于研究（100）和（111）取向的掺硼金刚石（BDD）电极的原子级形态和电子结构。几纳米的石墨化区域显示出硼掺杂剂对 BDD 表面的影响。通过第一性原理计算证实，局部状态密度测量表明这些特征的电子结构的特征在于由硼相关的晶格变形引起的带隙状态。在 BDD (111) 中独特地观察到与掺杂剂相关的石墨化，这解释了它在（100）方面的电化学优势。这些实验观察提供了关于掺杂剂在调节金刚石以及可能的其他功能性掺杂材料的电导率中的作用的原子级信息。
更新日期：2021-10-20
中文翻译：
金刚石表面的局部石墨化作为掺杂剂的表现
几十年来，掺杂金刚石电极因其优异的物理和电化学性能而备受关注。然而，直到现在还没有对金刚石表面掺杂剂效应的直接实验观察。在这里，低温扫描隧道显微镜用于研究（100）和（111）取向的掺硼金刚石（BDD）电极的原子级形态和电子结构。几纳米的石墨化区域显示出硼掺杂剂对 BDD 表面的影响。通过第一性原理计算证实，局部状态密度测量表明这些特征的电子结构的特征在于由硼相关的晶格变形引起的带隙状态。在 BDD (111) 中独特地观察到与掺杂剂相关的石墨化，这解释了它在（100）方面的电化学优势。这些实验观察提供了关于掺杂剂在调节金刚石以及可能的其他功能性掺杂材料的电导率中的作用的原子级信息。
京公网安备 11010802027423号