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Investigation of the dielectric relaxation mechanisms for Pb(Fe1/2Nb1/2)O3 single crystal based on the universal relaxation law
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2021-09-06 , DOI: 10.1016/j.physb.2021.413394
Xiaobing Li 1 , Cong Tao 1 , Shengdong Nie 1 , Xuan Ren 1 , Haiqing Xu 2 , Haosu Luo 2 , Kwok Ho Lam 3 , Xiaoming Jiang 4 , Zhi Guo 5
Affiliation  

Large-sized multiferroics Pb(Fe1/2Nb1/2)O3 (PFN) single crystal was grown by Bridgeman method in order to understand the giant dielectric response by investigating the electrical conductivity and dielectric properties. The synchrotron radiation soft x-ray absorption spectrum revealed the valence states of Fe in PFN crystal. PFN exhibits semiconductor behaviors in the thermal active electrical conductivity investigation. Besides, the frequency-dependent dielectric constants were measured in the frequency range from 100 Hz to 1 MHz to study the dielectric relaxation behaviors. Two relaxation processes were found and described by Havriliak-Negami equation. The origin of dielectric relaxation in PFN with semiconductor characters was discussed based on the universal relaxation law for a dipolar system.



中文翻译:

基于普遍弛豫定律的Pb(Fe1/2Nb1/2)O3单晶介电弛豫机制研究

大型多铁性 Pb(Fe 1/2 Nb 1/2 )O 3(PFN) 单晶通过布里奇曼方法生长,以通过研究电导率和介电特性来了解巨介电响应。同步辐射软 X 射线吸收光谱揭示了 PFN 晶体中 Fe 的价态。PFN 在热活性电导率研究中表现出半导体行为。此外,在 100 Hz 至 1 MHz 的频率范围内测量频率相关的介电常数以研究介电弛豫行为。Havriliak-Negami 方程发现并描述了两个弛豫过程。基于偶极系统的普遍弛豫定律讨论了具有半导体特性的PFN中介电弛豫的起源。

更新日期:2021-09-10
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