Synthesis of metal chalcogenides nanostructures is of profound importance in obtaining desired properties for photo-sensing device fabrication. The present proposed work concentrates on the effect of oleic acid in the preparation of NiS and SnS/NiS composites, and their photodiode properties were examined. Synthesized NiS and SnS/NiS nanosystem characterized by XRD analysis, Raman analysis, Field Emission Scanning Electron Microscopy micrographs. Hexagonal structure of NiS and hexagonal and orthorhombic composite structures SnS/NiS composite was confirmed with XRD patterns. The single-phase SnS nanoparticle and SnS/NiS nanocomposite were confirmed with Raman analysis. The change in morphology while increasing oleic acid on the preparation of NiS and SnS/NiS as aggregated quasi sphere structures were verified with FE-SEM micrographs. SnS/NiS fabricated with different ratios, and oleic acid-assisted NiS composite particles show better photo-response, which is essential for photodiode application.

金属硫属元素化物纳米结构的合成对于获得所需的光敏器件制造特性具有极其重要的意义。目前提出的工作集中在油酸在 NiS 和 SnS/NiS 复合材料制备中的影响，并检查了它们的光电二极管性能。合成的 NiS 和 SnS/NiS 纳米系统通过 XRD 分析、拉曼分析、场发射扫描电子显微镜显微照片表征。NiS 的六边形结构以及六边形和斜方晶复合结构 SnS/NiS 复合材料通过 XRD 图案得到证实。单相 SnS 纳米颗粒和 SnS/NiS 纳米复合材料通过拉曼分析得到证实。用 FE-SEM 显微照片验证了在制备 NiS 和 SnS/NiS 作为聚集准球形结构时增加油酸的形态变化。