Regardless of the excellent improvement in the assembling of perovskite solar cells (PSCs), the photon-harvesting performance of these devices is inadequate through the disproportionate recombination of generated charge carriers. The improvement of the charge carrier mobility can significantly reduce the recombination and help the perovskite devices reach the theoretical power conversion efficiency (PCE). The modification of charge selective contacts is one of the most effective approaches for reducing the carrier recombination. Herein, we introduce a facile and effective doping engineering approach based on graphene quantum dots (GQDs) for the modification of the SnO₂/ZnO bilayer electron transport layer (ETL). A comparative study of perovskite films deposited on SnO₂/ZnO layers with altered concentrations of GQDs was employed to significantly enhance the opto-electronic properties. The integration of GQDs into the ETL indicates a potential for improving the charge carrier transporting in PSCs. Overall, the PSC using the 4% GQD-modified ETL yields a PCE of 19.81% with a striking open-circuit voltage (V_OC) of 1.17 V. Besides, 4% GQD-modified ETL-based devices enhance the long-term ambient and thermal stability.

尽管钙钛矿太阳能电池 (PSC) 的组装取得了出色的改进，但由于产生的电荷载流子的不成比例复合，这些器件的光子收集性能不足。电荷载流子迁移率的提高可以显着减少复合并帮助钙钛矿器件达到理论功率转换效率（PCE）。电荷选择性接触的修饰是减少载流子复合的最有效方法之一。在此，我们介绍了一种基于石墨烯量子点 (GQD)的简便有效的掺杂工程方法，用于修饰 SnO₂/ZnO 双层电子传输层 (ETL)。沉积在 SnO 上的钙钛矿薄膜的比较研究采用改变 GQD 浓度的₂ /ZnO 层来显着增强光电性能。GQD 与 ETL 的集成表明有可能改善 PSC 中的电荷载流子传输。总体而言，使用 4% GQD 修饰的 ETL 的 PSC 产生 19.81% 的 PCE，显着的开路电压 ( V _OC ) 为 1.17 V。此外，基于 4% GQD 修饰的 ETL 设备增强了长期环境和热稳定性。