300 mm diameter thinned-down wafers are manufactured using temporary adhesive bonding. A thermoplastic adhesive and a silicon carrier are used to fabricate 100 μm thick silicon wafers. The impact of temperature on the thickness homogeneity of temporary bonded stacks is studied. From 150 °C up to 300 °C, the total thickness of the structure increases with the temperature. Moreover, its amplitude strongly increases with the thinned wafer stress and the adhesive thickness. On the contrary, it does not depend on the different interface adherence. The thinned wafer stress results in a significant peeling force which drives the deformation of the structure. This deformation is possible because of the high elasticity of the polymer at high temperature. To reduce this deformation, an alternative carrier is proposed yielding reduction of the adhesive thickness at the bonded edge only.

直径为 300 毫米的减薄晶片使用临时粘合剂粘合制造。热塑性粘合剂和硅载体用于制造 100 μm 厚的硅晶片。研究了温度对临时粘合叠层厚度均匀性的影响。从 150 °C 到 300 °C，结构的总厚度随着温度的升高而增加。此外，它的振幅随着晶片应力的变薄和粘合剂厚度的增加而显着增加。相反，它不依赖于不同的界面粘附。变薄的晶片应力导致显着的剥离力，从而驱动结构变形。由于聚合物在高温下的高弹性，这种变形是可能的。为了减少这种变形，