Nanoporous silicon (NPS) with mesopores size (2–50 nm) formed by anodization of highly doped p-type silicon at specific anodizing conditions is highly needed for technological applications. However, the surface of the NPS was rapidly oxidized upon exposure to the atmosphere due to the presence of boron. Therefore, there is a need for the leaching of the boron from the NPS surface. In the present work, the NPS layers with mesopores size were synthesized by anodizing highly doped p-type silicon, and then the boron impurity was leached by a wet chemical etching method. The consumed charge and other important characteristics during the anodization are monitored and summarized. The influence of anodizing time on the electric behavior of NPS was further investigated and displayed. The boron leaching impact on the NPS cell performance is reported and characterized by electrochemical impedance spectroscopy (EIS). The EIS measurements were carried out for NPS layers with different thicknesses, leached boron, and nonporous silicon samples. In this context, the change in boron leached and NPS morphology with leaching time was investigated by scanning electron microscope (SEM) and EIS measurements to explain the quantitative impact of that removal on its performance to be used as photoelectric devices. We hypothesize that the boron-leached layer could acts as anti-reflective coatings and assists in the passivation of the surface, which affected the results of the EIS measurements. The boron-leached thin layer could be considered as tunneling interfacial regions between the NPS layer and the front connection.

技术应用非常需要通过在特定阳极氧化条件下对高掺杂 p 型硅进行阳极氧化形成的具有中孔尺寸（2-50 nm）的纳米多孔硅（NPS）。然而，由于硼的存在，NPS 的表面在暴露于大气时会迅速氧化。因此，需要从 NPS 表面浸出硼。在目前的工作中，通过对高掺杂 p 型硅进行阳极氧化来合成具有中孔尺寸的 NPS 层，然后通过湿化学蚀刻方法浸出硼杂质。对阳极氧化过程中消耗的电荷和其他重要特性进行监控和总结。进一步研究和展示了阳极氧化时间对 NPS 电行为的影响。报道了硼浸出对 NPS 电池性能的影响，并通过电化学阻抗谱 (EIS) 对其进行表征。对不同厚度的 NPS 层、浸出的硼和无孔硅样品进行 EIS 测量。在这种情况下，通过扫描电子显微镜 (SEM) 和 EIS 测量研究了硼浸出和 NPS 形态随浸出时间的变化，以解释去除对其用作光电器件的性能的定量影响。我们假设硼浸出层可以作为抗反射涂层并有助于表面钝化，这会影响 EIS 测量的结果。硼浸出的薄层可以被认为是 NPS 层和前连接之间的隧道界面区域。