The solution method is recognized as the most promising type for the preparation of CuS particles because of the advantages of high yield and easy tuning. In this work, p-type CuS nanoparticles were synthesized by a low-temperature water bath method, and the effects of different copper sources, synthesis temperatures, and different raw material ratios on the preparation of CuS were investigated. The X-ray diffraction XRD results indicate that the prepared CuS is polycrystalline with a hexagonal structure. The optical data show that the bandgap of the prepared CuS is between 2.52-2.69 eV. SEM images show that the difference in copper source significantly affects the morphology of CuS particles. Based on the high optical absorption coefficient, p-CuS/n-Si heterojunction photodetectors were constructed from the synthesized CuS and n-Si wafers with an inverted pyramidal structure to investigate their photoresponse capability. The results show that under the irradiation of 980nm near-infrared light, it has a maximum responsivity of 0.493mA/W at 0V bias, indicating its good self-driven ability. At -5V bias, the maximum responsivity of 1.322 A/W and the switching ratio of 5171 show that p-CuS/n-Si heterojunction photodetectors have great potential to be used in the near-infrared detection field.

溶液法由于产量高、易调谐等优点，被公认为是制备 CuS 颗粒最有前途的方法。本工作采用低温水浴法合成了p型CuS纳米颗粒，研究了不同铜源、合成温度、不同原料配比对CuS制备的影响。X 射线衍射 XRD 结果表明制备的 CuS 是具有六方结构的多晶。光学数据表明制备的 CuS 的带隙在 2.52-2.69 eV 之间。SEM 图像表明，铜源的差异显着影响 CuS 颗粒的形貌。基于高光吸收系数，p-CuS/n-Si 异质结光电探测器由合成的 CuS 和 n-Si 晶片构成，具有倒金字塔结构，以研究它们的光响应能力。结果表明，在980nm近红外光照射下，其在0V偏压下的最大响应率为0.493mA/W，表明其具有良好的自驱动能力。在-5V偏置下，1.322 A/W的最大响应度和5171的开关比表明p-CuS/n-Si异质结光电探测器在近红外探测领域具有巨大的应用潜力。