In this study, SnSe nanorods were prepared by the precipitation method and under irradiation of ultrasound waves at different times. The effect of ultrasound waves irradiation's time on the physical properties of these nanostructures was studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray (EDX) spectroscopy, photoluminescence (PL), Raman, and UV-Vis-NIR spectroscopies. The results of XRD, Raman, and EDX spectra indicated the orthorhombic phase of SnSe and the presence of Sn and Se elements in the samples, respectively. The crystallite size was evaluated by XRD peak broadening, and FESEM images revealed that under ultrasound waves irradiation, the diameter of nanorods declined with increasing time. Additionally, given PL spectra, applying ultrasound waves resulted in decreasing the intensity and broadening some bands into higher wavelengths. Absorption spectra of these samples were measured in the range of 200-1100 nm, and the results demonstrated that they were shifted into higher wavelengths, and energy bandgap changes were explored considering ultrasound waves irradiation's time. Electrical properties revealed that with increasing time, the carrier concentration declined, and the responsivity, sensitivity, and carrier mobility were increased.

在本研究中，通过沉淀法和在不同时间的超声波照射下制备了 SnSe 纳米棒。通过 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FESEM)、能量色散 X 射线 (EDX) 光谱、光致发光 (PL)、拉曼光谱和紫外-可见-近红外光谱。XRD、Raman 和 EDX 光谱的结果分别表明 SnSe 的正交相以及样品中 Sn 和 Se 元素的存在。通过XRD峰展宽评估微晶尺寸，FESEM图像显示在超声波照射下，纳米棒的直径随着时间的增加而减小。此外，给定 PL 光谱，应用超声波导致强度降低并将一些波段扩大到更高的波长。这些样品的吸收光谱在 200-1100 nm 范围内测量，结果表明它们向更高的波长移动，并探讨了考虑超声波照射时间的能带隙变化。电学性质表明，随着时间的增加，载流子浓度下降，响应度、灵敏度和载流子迁移率增加。