In present study, the free radical behavior and interface interactions were investigated on the SiO₂ deposited polyimide using electron paramagnetic resonance spectroscopy and X-ray photoelectron spectroscopy, respectively. The results indicated that proton irradiation induced the formation of Si–NO and SiO₂/C compounds. It is interested to note that the SiO₂ at outmost surface and SiO₂-PI interface evolved into Si–NO and SiO₂/C, respectively. The reasons for the interaction are due to the irradiation induced degradation of amine groups and catalytical effect of free radicals aggregated in the interface. The irradiation induced segregation is the key factor to the distribution of Si-related compounds. The detailed mechanism was discussed in the paper.

在本研究中，分别使用电子顺磁共振光谱和 X 射线光电子光谱研究了 SiO ₂沉积的聚酰亚胺上的自由基行为和界面相互作用。结果表明，质子辐照诱导了Si-NO 和SiO ₂ /C 化合物的形成。它感兴趣地注意到，在SiO ₂在最外表面和SiO ₂ -PI接口演变成的Si-NO和SiO ₂/C，分别。相互作用的原因是由于胺基团的辐射诱导降解和界面中聚集的自由基的催化作用。辐照引起的偏析是Si相关化合物分布的关键因素。论文中讨论了详细的机制。