Hopping conductivity in crystalline semiconductors has been parameterized and there is an analytic expression for conductivity, suitable at very low temperatures. For the arbitrary temperatures, the analytic expression is not available. This work parameterizes the hopping conductivity using two parameters called the effective hopping energy and the effective hopping distance. This report presents a numerical method, which allows extraction of these parameters from a single temperature dependence of conductivity, simulated in a wide range of temperatures. An approximated method is proposed, which allows to extract the effective hopping energy from experimental temperature dependences of conductivity. The results agree qualitatively with the existing theories, created for the low and high-temperature limits, and bridge the gap between them by describing the behavior of effective parameters at moderate temperatures, where the transition from variable range hopping to nearest neighbor hopping occurs, accompanied by modifications of the energy-distribution of the density of localized states.

晶体半导体中的跳跃电导率已被参数化，并且有一个适用于极低温度的电导率解析表达式。对于任意温度，解析表达式不可用。这项工作使用称为有效跳跃能量和有效跳跃距离的两个参数来参数化跳跃电导率。本报告提出了一种数值方法，该方法允许从电导率的单一温度依赖性中提取这些参数，在很宽的温度范围内进行模拟。提出了一种近似方法，该方法允许从电导率的实验温度依赖性中提取有效跳跃能量。结果与为低温和高温极限创建的现有理论定性一致，