3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 mm), and this can give the opportunity to realize very sensitive strain sensors.

中文翻译：

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在 <111> 和 <100> 硅上生长的微加工单晶 3C-SiC 层的残余应力和杨氏模量的测量

3C-SiC 是一种用于 MEMS 系统的新兴材料，因为它具有出色的机械性能（高杨氏模量和低密度），允许设备在更高频率下针对给定的几何形状运行。这种材料的机械性能很大程度上取决于材料质量、缺陷密度和应力。出于这个原因，碳化硅在硅基微机电系统 (MEMS) 制造技术中的使用非常有限。在这项工作中，报告了在 <100> 和 <111> 取向的硅衬底上生长的具有不同掺杂类型的单晶 3C-SiC 层的杨氏模量和残余应力的完整表征，使用双夹梁的共振频率和应变的组合测量。这样，残余应力和残余应变都可以独立测量，杨氏模量可以通过胡克定律获得。从这些测量中可以看出，杨氏模量取决于层的厚度、取向、掺杂和应力。在这项工作中获得了非常好的杨氏模量值，即使对于非常薄的层（小于 1 毫米），这也为实现非常灵敏的应变传感器提供了机会。