Two-dimensional (2D) semiconductors are attractive channels to shrink the scale of field-effect transistors (FETs), and among which the anisotropic one is more advantageous for a higher on-state current (I_on). Monolayer (ML) SnSe₂, as an abundant, economic, nontoxic, and stable two-dimensional material, possesses an anisotropic electronic nature. Herein, we study the device performances of the ML SnSe₂ metal-oxide-semiconductor FETs (MOSFETs) and deduce their performance limit to an ultrashort gate length (L_g) and ultralow supply voltage (V_dd) by using the ab initio quantum transport simulation. An ultrahigh I_on of 5,660 and 3,145 µA/µm is acquired for the n-type 10-nm-L_g ML SnSe₂ MOSFET at V_dd = 0.7 V for high-performance (HP) and low-power (LP) applications, respectively. Specifically, until L_g scales down to 2 and 3 nm, the MOSFETs (at V_dd = 0.65 V) surpass I_on, intrinsic delay time (τ), and power-delay product (PDP) of the International Roadmap for Device and Systems (IRDS, 2020 version) for HP and LP devices for the year 2028. Moreover, the 5-nm-L_g ML SnSe₂ MOSFET (at V_dd = 0.4 V) fulfills the IRDS HP device and the 7-nm-L_g MOSFET (at V_dd = 0.55 V) fulfills the IRDS LP device for the year 2034.

二维 (2D) 半导体是缩小场效应晶体管 (FET) 规模的有吸引力的通道，其中各向异性半导体更有利于更高的导通电流 ( I _on )。单层 (ML) SnSe ₂作为一种丰富、经济、无毒且稳定的二维材料，具有各向异性的电子性质。在此，我们研究了 ML SnSe ₂金属氧化物半导体 FET (MOSFET)的器件性能，并通过使用ab initio量子传输推断其性能限制为超短栅极长度 ( L _g ) 和超低电源电压 ( V _dd )模拟。超高压我_上对于高性能 (HP) 和低功率 (LP) 应用，在V _dd = 0.7 V 时，n 型 10- nm - L _g ML SnSe ₂ MOSFET 分别获得了 5,660 和 3,145 µA/µm 的电流。具体来说，在L _g缩小到 2 和 3 nm 之前，MOSFET（在V _dd = 0.65 V 时）超过了I _on、固有延迟时间 ( τ ) 和国际设备和系统路线图的功率延迟积 (PDP) （IRDS，2020 版）用于 2028 年的 HP 和 LP 器件。此外，5- nm - L _g ML SnSe ₂ MOSFET（在V _dd= 0.4 V) 满足 IRDS HP 器件，7-nm- L _g MOSFET（V _dd = 0.55 V）满足 2034 年的 IRDS LP 器件。