This paper reports on pin photodiode frequency response optimization based on In_xGa_1-xAs_1-yN_y quaternary lattice matched to GaAs. Two transparent layers are placed on p-side and n-side in order to manage the photodiode frequency response limitations. The lattice matching condition is calculated in order to obtain stable structure. The physical and optical parameters calculations are performed at room temperature showing the impact of nitrogen on the absorption coefficient. A stable structure, having 2 % of nitrogen and 6% of indium, allows to achieve a cutoff frequency of about 116 GHz and a capacitance of 5.21fF while the quantum efficiency is 41.59% for a depletion region thickness of about 0.55 µm. However, in case of depletion region thickness of about 0.625 µm, the cutoff frequency degrades to 98 GHz while the capacitance diminishes to 4.58fF and the quantum efficiency increases to 51.56%. In addition, a comparative study with literature results has been carried out in order to show the advantages of the proposed photodiode. This comparison affirms that the proposed photodiode based on InGaAsN lattice matched to GaAs exhibits high-speed photo-detection. This work allowed us to obtain a p-i-n photodiode with stable structure suitable for photo-detection at 1.15 µm.

本文报告了基于 In _x Ga _1-x As _1-y N _{y 的}pin 光电二极管频率响应优化与 GaAs 匹配的四元晶格。两个透明层放置在 p 侧和 n 侧，以管理光电二极管频率响应限制。计算晶格匹配条件以获得稳定的结构。物理和光学参数计算在室温下进行，显示了氮对吸收系数的影响。具有 2% 的氮和 6% 的铟的稳定结构允许实现约 116 GHz 的截止频率和 5.21fF 的电容，而对于约 0.55 µm 的耗尽区厚度，量子效率为 41.59%。然而，在耗尽区厚度约为 0.625 µm 的情况下，截止频率下降到 98 GHz，而电容下降到 4.58fF，量子效率增加到 51.56%。此外，为了展示所提出的光电二极管的优点，已经进行了与文献结果的比较研究。这种比较证实了所提出的基于与 GaAs 匹配的 InGaAsN 晶格的光电二极管表现出高速光电检测。这项工作使我们能够获得结构稳定的 pin 光电二极管，适用于 1.15 µm 的光电检测。