Sub-10 MeV proton-induced single-event transients (SETs) were firstly reported in this work. Sub-10 MeV proton experiment demonstrates that sub-10 MeV proton-induced SET pulse can be wider than 200 ps and the average SET pulse-width increases with proton energy. The analysis indicates that the observed SETs are attributed to recoil ions and SETs induced by oxygen recoils can be much wider than those induced by silicon recoils. The average deposited charge of the recoil ions increases with proton energy, which is the reason for the increased average SET pulse-width as proton energy increases.

中文翻译：

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65 nm CMOS 反相器链中低于 10 MeV 质子诱导的单事件瞬变

在这项工作中首次报道了低于 10 MeV 质子诱导的单事件瞬态 (SET)。亚 10 MeV 质子实验表明亚 10 MeV 质子诱导的 SET 脉冲可以宽于 200 ps 并且平均 SET 脉冲宽度随质子能量而增加。分析表明，观察到的 SET 归因于反冲离子，并且由氧反冲引起的 SET 可能比由硅反冲引起的 SET 宽得多。反冲离子的平均沉积电荷随着质子能量的增加而增加，这是随着质子能量增加而增加平均 SET 脉冲宽度的原因。