A two-step chemical bath deposition (CBD) method that involves the deposition of films at two different bath temperatures is developed to enhance the grain growth and hole mobility of lead sulfide (PbS) thin films. The films deposited at three different conditions; first at 60 °C for 2 h, second at 30 °C for 1 h and at 60 °C for the subsequent 1 h, and finally at 60 °C for 1 h and at 30 °C for the subsequent hour. The deposition of PbS at only 60 °C for 2 h leads to the formation of cubic crystals with different sizes and hole mobility of 43.8 cm²V⁻¹s⁻¹. The deposition at a low temperature of 30 °C for the initial 1 h followed by the deposition at a high temperature of 60 °C for the subsequent hour increases the grain size and hole mobility to 62.2 cm²V⁻¹s⁻¹. However, the deposition of PbS at a high temperature of 60 °C for 1 h followed by the deposition at a low temperature of 30 °C for the subsequent hour decreases the grain size and hole mobility to 32.1 cm²V⁻¹s⁻¹. The PbS film deposited at low temperature in the first step acts as a seed layer for the growth of large-grained PbS in the second step. Thus, the two-step CBD method enhances the grain growth and hole mobility of PbS films. Hence, the two-step CBD method is very much useful for the growth of PbS for its applications in optoelectronic devices.

开发了一种两步化学浴沉积 (CBD) 方法，该方法涉及在两种不同浴温下沉积薄膜，以增强硫化铅 (PbS) 薄膜的晶粒生长和空穴迁移率。在三种不同条件下沉积的薄膜；首先在 60 °C 下保持 2 小时，然后在 30 °C 下保持 1 小时，然后在 60 °C 下保持 1 小时，最后在 60 °C 下保持 1 小时，然后在 30 °C 下保持一小时。PbS 仅在 60°C 下沉积 2 小时导致形成具有不同尺寸和空穴迁移率 43.8 cm ² V ^-1 s ^-1的立方晶体。最初 1 小时在 30 °C 的低温下沉积，然后在随后的 1 小时内在 60 °C 的高温下沉积，使晶粒尺寸和空穴迁移率增加到 62.2 cm² V ^-1 s ^-1。然而，PbS 在 60 °C 的高温下沉积 1 小时，然后在 30 °C 的低温下沉积随后的一小时，将晶粒尺寸和空穴迁移率降低至 32.1 cm ² V ^-1 s ^-1 . 在第一步中低温沉积的 PbS 膜充当第二步中大晶粒 PbS 生长的种子层。因此，两步 CBD 方法增强了 PbS 薄膜的晶粒生长和空穴迁移率。因此，两步 CBD 方法对于 PbS 在光电器件中的应用非常有用。