This work focused on the effects of wettability on bulk Si growth from Si–Sn melts during the zone melting directional solidification. The wettability behaviors of Sn/Si, Si–90 wt%Sn/SiO₂, and Si/SiO₂ were investigated along with the micro-morphology observation. The results showed that the surface roughness of the Si substrate and the growth temperature were essential factors influencing the wettability evolution. The reaction between Si and O formed SiO₂ layer on the Si substrate, which could introduce a gap at relatively low temperatures, and the released SiO gas due to the reaction between Si and SiO₂ caused the instant Si growth.

这项工作的重点是润湿性对区域熔化定向凝固过程中 Si-Sn 熔体的块体 Si 生长的影响。Sn/Si、Si–90 wt%Sn/SiO ₂和Si/SiO ₂的润湿行为与微观形貌观察一起进行了研究。结果表明，Si衬底的表面粗糙度和生长温度是影响润湿性演变的重要因素。Si 和 O 之间的反应在 Si衬底上形成 SiO ₂层，这会在相对较低的温度下引入间隙，并且由于 Si 和 SiO ₂之间的反应而释放的 SiO 气体导致瞬间 Si 生长。