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High-frequency and below bandgap anisotropic dielectric constants inα-(AlxGa1−x)2O3(0≤x≤1)
Applied Physics Letters ( IF 3.5 ) Pub Date : 2021-09-02 , DOI: 10.1063/5.0064528
Matthew Hilfiker 1 , Ufuk Kilic 1 , Megan Stokey 1 , Riena Jinno 2, 3 , Yongjin Cho 2 , Huili Grace Xing 2, 4 , Debdeep Jena 2, 4 , Rafał Korlacki 1 , Mathias Schubert 1, 5, 6
Affiliation  

A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum α-(AlxGa1−x)2O3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (ε,) and parallel (ε,) to the thin film c-axis. The optical birefringence is negative throughout the composition range, and the overall index of refraction substantially decreases upon incorporation of Al. We find small bowing parameters of the high-frequency dielectric constants with b=0.386 and b=0.307.

中文翻译:

α-(AlxGa1−x)2O3(0≤x≤1)中的高频及带隙以下各向异性介电常数

穆勒矩阵光谱椭偏法用于研究刚玉α -(Al x Ga 1- x ) 2 O 3薄膜在其低于带隙光谱区的各向异性介电常数。样品组使用等离子体辅助分子束外延在m面蓝宝石上外延生长。光谱椭偏测量是在多个方位角进行的,以解决单轴介电特性。应用柯西色散模型,并确定垂直极化的高频介电常数(ε,) 和并行 (ε,) 到薄膜c轴。在整个组成范围内,光学双折射为负,并且在掺入 Al 后总折射率显着降低。我们发现高频介电常数的小弯曲参数为=0.386=0.307.
更新日期:2021-09-03
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