This paper reports on the development of an automated nebulizer-spray pyrolysis (NSP) system and comparison studies of zinc-doped copper oxide with doping concentrations of 1%, 3%, and 5% deposited by manual and automated nebulizer-spray pyrolysis (NSP) systems for heterojunction-diode applications. The structural, optical, morphological, and electrical properties of the prepared manual and automated CuO:Zn thin films were compared. X-ray diffractometry (XRD) studies revealed that all the manual and automated CuO:Zn thin films have monoclinic structure. The crystallite size of the films has been calculated using Scherrer’s formula. Field-emission scanning electron microscope (FESEM) images revealed spherical-shaped small grains in the automated CuO:Zn thin films, while agglomerated particles are observed in the manual CuO:Zn thin films. The highest optical absorbance and lowest optical band gap values were recorded using UV–Vis spectrophotometry. The optical band gap value increases when the doping with Zn increases beyond 3%. The maximum electrical conductivity of manual and automated CuO:Zn thin films was recorded using an electrometer. Based on the results obtained from these characterization studies, p-type (3% CuO:Zn thin film) and n-type (silicon wafer) samples prepared using the manual and automated NSP systems were used to fabricate Ag/p-CuO:Zn/n-Si heterojunction diodes, which were studied under dark and light conditions. The investigation results reveal that the heterojunction diode fabricated using the automated NSP system has a lower ideality factor and barrier height compared with the heterojunction diode prepared using the manual NSP system.

本文报告了自动雾化器-喷雾热解 (NSP) 系统的开发以及通过手动和自动雾化器-喷雾热解 (NSP) 沉积的掺杂浓度为 1%、3% 和 5% 的锌掺杂氧化铜的比较研究) 异质结二极管应用系统。比较了手动和自动制备的 CuO:Zn 薄膜的结构、光学、形态和电学特性。X 射线衍射 (XRD) 研究表明，所有手动和自动的 CuO:Zn 薄膜都具有单斜结构。使用谢勒公式计算薄膜的微晶尺寸。场发射扫描电子显微镜 (FESEM) 图像显示自动 CuO:Zn 薄膜中存在球形小颗粒，而在手动 CuO:Zn 薄膜中观察到团聚颗粒。使用紫外-可见分光光度法记录了最高的吸光度和最低的光学带隙值。当 Zn 的掺杂增加超过 3% 时，光学带隙值增加。使用静电计记录手动和自​​动 CuO:Zn 薄膜的最大电导率。基于从这些表征研究中获得的结果，使用手动和自动 NSP 系统制备的p型（3% CuO:Zn 薄膜）和n型（硅晶片）样品用于制造 Ag/p-CuO:Zn/n-Si 异质结二极管，并对其进行研究在黑暗和明亮的条件下。研究结果表明，与使用手动 NSP 系统制备的异质结二极管相比，使用自动化 NSP 系统制备的异质结二极管具有较低的理想因子和势垒高度。