A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced by three orders of magnitude and its noise spectral intensity shows distinct improvement compared with the traditional Cr/Au–GaN–Cr/Au MSM photodetector. The improved device performance is attributed to low-defect MXene-GaN van der Waals interfaces. Thanks to the high quality MXene-GaN interfaces, it is possible to verify that the patterned substrate can locally improve both light extraction and photocurrent collection. The measured responsivity and specific detectivity reach as high as 64.6 A/W and 1.93 × 10¹² Jones, respectively, making it a potential candidate for underwater optical detection and communication. The simple fabrication of MXene-GaN-MXene photodetectors spearheaded the way to high performance photodetection by combining the advantages of emerging 2D MXene materials with the conventional III-V materials.

MXene-GaN-MXene 基多量子阱光电探测器是通过简单的滴铸法在图案化的蓝宝石衬底上制备的。与使用 Cr/Au 电极的传统金属-半导体-金属 (MSM) 光电探测器相比，MXene 电极的使用提高了响应度并降低了暗电流。与传统的 Cr/Au-GaN-Cr/Au MSM 光电探测器相比，使用 MXene-GaN 范德华结的器件的暗电流降低了三个数量级，其噪声光谱强度显示出明显的改善。改进的器件性能归功于低缺陷的 MXene-GaN 范德华界面。由于高质量的 MXene-GaN 界面，可以验证图案化衬底可以局部改善光提取和光电流收集。¹² Jones，使其成为水下光学探测和通信的潜在候选者。MXene-GaN-MXene 光电探测器的简单制造通过将新兴 2D MXene 材料与传统 III-V 族材料的优势相结合，引领了实现高性能光电探测的道路。