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Optimizing Vertical Crystallization for Efficient Perovskite Solar Cells by Buried Composite Layers
Solar RRL ( IF 6.0 ) Pub Date : 2021-09-01 , DOI: 10.1002/solr.202100457
Xiaoyu Yang 1 , Lei Li 1 , Jiang Wu 1, 2 , Qin Hu 3 , Yanju Wang 1 , Thomas P. Russell 4, 5 , Yongguang Tu 6 , Rui Zhu 1, 2, 7
Affiliation  

Planar-heterojunction perovskite solar cells (PSCs) have experienced rapid evolution in recent years because of the low-temperature processing, suitable alignment, and high mobility of the tin oxide buried contact layer. However, improper SnO2 surface states and poor crystallinity of the top perovskite films are still the main obstacles for the planar PSCs in which performance always lags behind their mesoporous counterparts. Herein, a new buried contact is reported by introducing graphitic carbon nitride (g-C3N4) into the commonly used SnO2 which performs outstanding transmittance, conductivity, and surface states for a high-quality electron-transporting layer. Moreover, the vertical composition and crystallinity of the top perovskite film are manipulated by rich amino groups on the edge of the g-C3N4 nanosheets which induce the prenucleation of the lead-rich species at the buried interface. Benefiting from the high-quality buried contacts and the optimized perovskite layers, the resultant PSCs achieve a champion efficiency of 21.5% with all photovoltaic parameters enhanced in comparison with their control counterparts (<20%).

中文翻译:

通过埋入复合层优化高效钙钛矿太阳能电池的垂直结晶

平面异质结钙钛矿太阳能电池(PSC)由于氧化锡埋接触层的低温加工、合适的排列和高迁移率,近年来经历了快速发展。然而,不适当的 SnO 2表面状态和顶部钙钛矿薄膜的结晶度差仍然是平面 PSC 的主要障碍,其性能总是落后于它们的介孔对应物。在此,通过将石墨氮化碳 (gC 3 N 4 ) 引入常用的 SnO 2 中,报道了一种新的埋入式接触为高质量的电子传输层提供出色的透射率、导电率和表面状态。此外,顶部钙钛矿薄膜的垂直组成和结晶度受 gC 3 N 4纳米片边缘上的富氨基控制,这会导致埋层界面处富铅物质的预成核。受益于高质量的埋入触点和优化的钙钛矿层,所得 PSC 实现了 21.5% 的冠军效率,与它们的对照对应物 (<20%) 相比,所有光伏参数都得到了增强。
更新日期:2021-10-06
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