Systematically prepared ultrathin chromium films were analyzed for their structural, optical, and electrical properties. The films with thickness from 2.5 nm up to 57 nm were deposited by magnetron sputtering, and the deposition process was optimized to obtain compact yet low-stress films. The films were studied by non-destructive techniques like the variable angle spectroscopic ellipsometry (VASE), the spectrophotometry in a wide spectral range, the X-ray diffraction (XRD), the X-ray reflectometry (XRR) and the contactless microwave resistance measurement. Nanoscale thickness measured by XRR was confirmed then by ellipsometry. The films with thickness higher than 5 nm exhibits only metallic chromium phase (c-Cr) with 110 preferred orientation. The obtained optical constants of ultrathin chromium films are significantly higher compared to the traditionally referenced values, particularly in the infrared range. We analyse reliability of the obtained data and, for the thickest of our films, the optical constants are in good agreement with the recently published values obtained for polycrystalline bulky chromium studied by the reflection electron energy loss spectroscopy (REELS). The thickness-dependent resistivity of the films follows the Mayadas and Shatzk's distribution with a modification necessary for the films thinner than the value of the mean free path of electrons in the ideal chromium crystal. For such thin films the resistivity is a function of film thickness value, while the resistivity of the thicker films is governed by the mean size of the film crystallites.

分析了系统制备的超薄铬薄膜的结构、光学和电学性能。通过磁控溅射沉积厚度为 2.5 nm 至 57 nm 的薄膜，并优化沉积工艺以获得紧凑且低应力的薄膜。通过可变角度光谱椭偏仪 (VASE)、宽光谱范围内的分光光度法、X 射线衍射 (XRD)、X 射线反射法 (XRR) 和非接触式微波电阻测量等无损技术对薄膜进行了研究. 通过 XRR 测量的纳米级厚度然后通过椭圆光度法确认。厚度大于 5 nm 的薄膜仅表现出具有 110 择优取向的金属铬相 (c-Cr)。与传统参考值相比，超薄铬膜获得的光学常数明显更高，尤其是在红外范围内。我们分析了所获得数据的可靠性，对于我们最厚的薄膜，光学常数与最近公布的通过反射电子能量损失光谱 (REELS) 研究的多晶大铬获得的值非常一致。薄膜的厚度相关电阻率遵循 Mayadas 和 Shatzk 分布，并进行必要的修改，使薄膜比理想铬晶体中电子的平均自由程值更薄。对于这种薄膜，电阻率是薄膜厚度值的函数，而较厚薄膜的电阻率受薄膜微晶的平均尺寸控制。