The properties of InAs/In_0.53Ga_0.37As triangular quantum wells (QWs) grown on an InP/SiO₂/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 μm with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO₂/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid-infrared wavelength range.

研究了通过离子切片技术在 InP/SiO ₂ /Si 集成衬底上生长的 InAs/In _0.53 Ga _0.37 As 三角形量子阱 (QWs) 的性质。材料结构和生长质量通过 X 射线衍射 (XRD) 和透射电子显微镜测量进行表征。还分析了不同温度下的光致发光 (PL) 光谱。随着温度从 12.4 增加到 300 K，PL 峰值波长从 1.94 μm 红移到 2.13 μm。QWs 在 InP/SiO ₂上的实验结果发现 /Si 衬底与在 InP 衬底上生长的相同 QW 的性能相当。该结果有望用于未来将 Si 与基于 InP 的光学器件集成到中红外波长范围内的光发射应用中。