Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth,Crystal Growth & Design

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Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-09-02 , DOI: 10.1021/acs.cgd.1c00728
Haidi Wu _{1,

2} , Jing Ning _{1,

2} , Yanqing Jia _{1,

2} , Chaochao Yan _{1,

2} , Yu Zeng _{1,

2} , Haibin Guo _{1,

2} , Jianglin Zhao _{1,

2} , Yanbo Wang _{1,

2} , Jincheng Zhang _{1,

2} , Dong Wang _{1,

2,

3} , Yue Hao _{1,

2}

Affiliation

In the van der Waals epitaxy of III-nitride semiconductor materials, graphene plays an increasingly important role. In this work, to improve the quality of the gallium nitride (GaN) film on sapphire, we innovatively propose a composite insertion layer of graphene/silica nanospheres (G/S-n). The G/S-n composite insertion layer successfully realizes van der Waals self-assembly for the silica nanospheres. The G/S-n buffer layer can effectively block threading dislocations during the growth of GaN materials, and experimental results show that it significantly enhances the quality of the GaN film. The screw- and edge-dislocation densities are reduced from 1.75 × 10⁸ to 7.81 × 10⁷ cm² and from 8.66 × 10⁸ to 5.84 × 10⁸ cm², respectively. This work provides a foundation for future research into the van der Waals epitaxy of nitrides.

中文翻译：

用于高质量氮化镓生长的范德华自组装二氧化硅-纳米球/石墨烯缓冲层

在III族氮化物半导体材料的范德华外延中，石墨烯扮演着越来越重要的角色。在这项工作中，为了提高蓝宝石上氮化镓 (GaN) 膜的质量，我们创新地提出了石墨烯/二氧化硅纳米球 (G/Sn) 的复合插入层。G/Sn复合插入层成功实现了二氧化硅纳米球的范德华自组装。G/Sn缓冲层可以有效阻挡GaN材料生长过程中的穿透位错，实验结果表明它显着提高了GaN薄膜的质量。螺位错和刃位错密度从 1.75 × 10 ⁸减少到 7.81 × 10 ⁷ cm ²和从 8.66 × 10 ^{8 减少}到 5.84 × 10 ⁸厘米²，分别。这项工作为未来研究氮化物的范德华外延奠定了基础。

更新日期：2021-10-06

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