An accurate third nearest neighbor tight-binding model with overlap parameters is employed to compute the electronic and thermo-electrical properties of monolayer Silicene in the presence of bias voltage and magnetic field. The unbiased Silicene has zero band gap and in the presence of bias voltage, it becomes a semiconductor with a direct band gap at the K point. Magnetic field splits band structure with the linear dispersion in the vicinity of the K point and the band gap of biased Silicene decreases and becomes zero with the magnetic field. The first optical peak shows a blue shift by reducing the peak intensity with the bias voltage. In the presence of bias voltage and magnetic field, the thermoelectric properties increase to their maximum value with temperature increasing because of the increase in the thermal excitation of charge carriers. In a higher temperature range, the thermal properties show continuously decreasing due to the increased scattering intensity of the charge carriers which leads to decrease in the carrier mobility. The thermal properties of the biased Silicene are smaller than that unbiased Silicene because the band gap is opened and enlarged in the presence of bias voltage. The thermal functions of Silicene increase with the magnetic field increases due to the band gap decreasing and they are significantly larger than that of biased and unbiased Silicene.

使用具有重叠参数的准确的第三最近邻紧束缚模型来计算存在偏置电压和磁场的单层硅的电子和热电特性。无偏压的Silicene带隙为零，在偏压存在的情况下，它变成了在K点具有直接带隙的半导体。磁场在K点附近以线性色散分裂能带结构，偏置Silicene的带隙随着磁场减小并变为零。第一个光学峰通过偏置电压降低峰强度而显示蓝移。在偏置电压和磁场的存在下，由于电荷载流子的热激发增加，热电特性随着温度的升高而增加到最大值。在较高的温度范围内，由于电荷载流子的散射强度增加，导致载流子迁移率降低，热性能显示出持续下降。由于在偏置电压的存在下带隙打开并扩大，偏置硅烯的热性能小于无偏置硅烯。由于带隙减小，Silicene 的热函数随着磁场的增加而增加，并且它们明显大于偏置和无偏置 Silicene 的热函数。