In the present work, a silicon substrate has been patterned with a gold thin film of thickness 15 nm using thermal evaporation, followed by growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition. The effect of temperature on the growth of CNTs on Au patterned substrate is studied using Raman and Field emission scanning electron microscope (SEM). A significant change in the growth of the CNTs grown on Au film patterned substrate with temperature can be observed using SEM images. However, no significant change in the micro crystallinity of the films was observed. Field emission properties of vertically aligned carbon nanotubes, grown at different temperatures, on gold film patterned substrate has been investigated. For the non-patterned substrate, for the CNT film grown at 900 °C, the current density comes out to be 8.0 mA/cm²@ 4.8V/μm, which increases to 14.6 mA/cm² in the case of CNT film grown on gold patterned substrate. The observed enhancement of nearly 180% in current density for the patterned substrate as compared to non-patterned silicon substrate is primarily attributed to the reduced electric field screening. The reduced screening is realized with the help of COMSOL simulation, showing a significant enhancement in the local electric field near edges.

在目前的工作中，使用热蒸发将硅衬底图案化为厚度为 15 nm的金薄膜，然后使用热化学气相沉积生长碳纳米管 (CNT)。使用拉曼和场发射扫描电子显微镜 (SEM) 研究了温度对 CNT 在 Au 图案化衬底上生长的影响。使用 SEM 图像可以观察到在金膜图案化基板上生长的 CNT 的生长随温度的显着变化。但微量变化不大观察薄膜的结晶度。已经研究了在不同温度下在金膜图案化衬底上垂直排列的碳纳米管的场发射特性。对于非图案化基板，对于在 900 °C 下生长的 CNT 膜，电流密度为 8.0 mA/cm ² @ 4.8V/μm，在 CNT 膜生长的情况下增加到 14.6 mA/cm ²在金图案基板上。与非图案化硅基板相比，观察到的图案化基板的电流密度提高了近 180%，这主要归因于电场屏蔽的减少。在 COMSOL 仿真的帮助下实现了减少的屏蔽，显示边缘附近的局部电场显着增强。