Quantum dots are a promising new candidate for use as emissive materials in the next generation of light-emitting diodes for lighting and display applications. One of the key issues in the solution preparation of inverted quantum dot light-emitting diodes (QDLEDs) is making a suitable sandwich structure of hydrophilic and hydrophobic layers. We solved this problem by inserting an ultrathin film of thermally evaporated MoO₃ between a hydrophilic PEDOT:PSS layer and a hydrophobic PVK layer by controlling the delicate process. Inverted QD LEDs with an optimal MoO₃ thickness of 5 nm exhibited a maximum current efficiency of nearly 4 cd A⁻¹, a maximum EQE of 2.7682%, and a maximum luminance of 9317 cd m⁻². Furthermore, the MoO₃ interlayer extends the lifetime of the QDLED devices to approximately 300%.

中文翻译：

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超薄三氧化钼夹层对倒量子点发光二极管性能的影响

量子点是一种很有前途的新候选材料，可用作下一代发光二极管的发光材料，用于照明和显示应用。倒置量子点发光二极管 (QDLED) 溶液制备的关键问题之一是制作合适的亲水层和疏水层的夹心结构。我们通过控制精细工艺在亲水性 PEDOT:PSS 层和疏水性 PVK 层之间插入热蒸发的 MoO ₃超薄膜解决了这个问题。最佳MoO ₃厚度为5 nm 的倒置QD LED显示出接近4 cd A ^-1的最大电流效率、2.7682% 的最大EQE 和9317 cd m ^-2的最大亮度。此外，MoO₃夹层将 QDLED 器件的寿命延长至约 300%。