2D carbon materials are examined extensively by virtue of having functional-groups richness and adaptable interlayer spacing with exquisite electrochemical characteristics and flexibility. The phenomenal character of these materials enables them to be resilient in building memristive flexible electronics. The present work reports on a facile, inexpensive fabrication scheme of free-standing memory devices based on graphene and MXene, exhibiting complementary and capacitive resistive switching (RS) mechanisms for a retention time of 10⁴ s with higher durability for >2400 cycles. The complementary RS in the single trilayer reduced graphene oxide/graphene oxide/reduced graphene oxide (rGO/GO/rGO) carbon cell helps in reducing fabrication complexity with its direct integration in crossbar arrays. While the observed capacitive switching enables MXene paper/graphene oxide paper/MXene paper (M/GO/M) memory device ensemble to retain combine capacitive as well as switching properties for designing self-generating memory frameworks, sustaining a continuous current even when the external applied bias is removed. The present work will pave pathways for carbon memristors as considerably competent candidates toward designing high performance flexible non-volatile memory architectures.

中文翻译：

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基于石墨烯和 MXene 的独立式碳忆阻器，用于灵活的 2D 存储器应用

二维碳材料由于具有丰富的官能团和可适应的层间距以及优良的电化学特性和柔韧性而被广泛研究。这些材料的显着特性使它们在构建忆阻柔性电子产品时具有弹性。目前的工作报告了一种基于石墨烯和 MXene 的独立式存储器件的简便、廉价制造方案，展示了互补和电容电阻切换 (RS) 机制，保留时间为 10 ⁴ s 具有更高的耐久性 > 2400 次循环。单三层还原氧化石墨烯/氧化石墨烯/还原氧化石墨烯 (rGO/GO/rGO) 碳电池中的互补 RS 通过直接集成到交叉开关阵列中有助于降低制造复杂性。虽然观察到的电容切换使 MXene 纸/氧化石墨烯纸/MXene 纸 (M/GO/M) 存储设备组合能够保持结合电容和切换特性，以设计自生存储器框架，即使在外部施加的偏差被移除。目前的工作将为碳忆阻器作为设计高性能灵活非易失性存储器架构的相当有能力的候选者铺平道路。