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Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2 on GaAs
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-08-31 , DOI: 10.1021/acs.cgd.1c00673 Bartłomiej Seredyński 1 , Zuzanna Ogorzałek 1 , Wiktoria Zajkowska 2 , Rafał Bożek 1 , Mateusz Tokarczyk 1 , Jan Suffczyński 1 , Sławomir Kret 2 , Janusz Sadowski 1, 2, 3 , Marta Gryglas-Borysiewicz 1 , Wojciech Pacuski 1
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-08-31 , DOI: 10.1021/acs.cgd.1c00673 Bartłomiej Seredyński 1 , Zuzanna Ogorzałek 1 , Wiktoria Zajkowska 2 , Rafał Bożek 1 , Mateusz Tokarczyk 1 , Jan Suffczyński 1 , Sławomir Kret 2 , Janusz Sadowski 1, 2, 3 , Marta Gryglas-Borysiewicz 1 , Wojciech Pacuski 1
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The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here, we present the first molecular beam epitaxy growth of a NiTe2 2D transition-metal dichalcogenide. Importantly, the growth is realized on a nearly lattice-matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunneling microscopy. Surface coverage and atomic-scale order are evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that the NiTe2 layers are metallic, with a Hall concentration of 1020 to 1023 cm–3, depending on the growth conditions.
中文翻译：
2D 材料的分子束外延几乎与 3D 衬底晶格匹配：GaAs 上的 NiTe2
有趣的 2D 材料与常用 3D 衬底之间的晶格失配是单片 2D/3D 异质结构外延生长的障碍之一，但许多 2D 材料尚未考虑用于外延。在这里，我们展示了 NiTe 2 2D 过渡金属二硫属化物的第一次分子束外延生长。重要的是，生长是在几乎晶格匹配的 GaAs(111)B 衬底上实现的。通过电子衍射、X 射线衍射和扫描隧道显微镜研究生长层的结构特性。用原子力、扫描电子和透射电子显微镜获得的图像证明了表面覆盖率和原子尺度顺序。测量基本传输特性，确认 NiTe 2层是金属的，霍尔浓度为 10 20到 10 23 cm –3，具体取决于生长条件。
更新日期：2021-10-06
中文翻译：
2D 材料的分子束外延几乎与 3D 衬底晶格匹配：GaAs 上的 NiTe2
有趣的 2D 材料与常用 3D 衬底之间的晶格失配是单片 2D/3D 异质结构外延生长的障碍之一，但许多 2D 材料尚未考虑用于外延。在这里，我们展示了 NiTe 2 2D 过渡金属二硫属化物的第一次分子束外延生长。重要的是，生长是在几乎晶格匹配的 GaAs(111)B 衬底上实现的。通过电子衍射、X 射线衍射和扫描隧道显微镜研究生长层的结构特性。用原子力、扫描电子和透射电子显微镜获得的图像证明了表面覆盖率和原子尺度顺序。测量基本传输特性，确认 NiTe 2层是金属的，霍尔浓度为 10 20到 10 23 cm –3，具体取决于生长条件。
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