Inserting a modifying layer between Cu and diamond is essential to solving the interfacial bonding problem in Cu/diamond composites for thermal management applications. In this study, we deposit Cu/Cr bilayer thin films onto a diamond substrate by magnetron sputtering. The microstructural evolution of the Cr interlayer in the Cu/Cr/diamond structure upon heat treatment at 673-873 K was studied in detail. This method facilitates the observation of interfacial microstructure evolution between Cu and diamond in the processing of Cu/diamond composites. The transmission electron microscopy and Auger electron spectroscopy characterization show that a Cu/Cr/Cr₃C₂/diamond structure is obtained by the reaction of the Cr interlayer with the diamond substrate. The crystallite sizes become larger and some holes are formed on the surface of the Cu/Cr/diamond samples after heat treatment. Interestingly, a thin Cr layer is formed on the top of the Cu film by Cr diffusion through Cu film at the high annealing temperature of 773 K.

在铜和金刚石之间插入改性层对于解决用于热管理应用的铜/金刚石复合材料中的界面结合问题至关重要。在这项研究中，我们通过磁控溅射将 Cu/Cr 双层薄膜沉积到金刚石基板上。详细研究了在 673-873 K 下热处理后 Cu/Cr/金刚石结构中 Cr 夹层的微观结构演变。该方法有助于在铜/金刚石复合材料的加工过程中观察铜和金刚石之间的界面微观结构演变。透射电子显微镜和俄歇电子能谱表征表明，Cu/Cr/Cr ₃ C ₂/金刚石结构是通过Cr中间层与金刚石基材的反应获得的。热处理后的Cu/Cr/金刚石样品表面微晶尺寸变大并形成一些孔洞。有趣的是，在 773 K 的高退火温度下，通过 Cr 扩散穿过 Cu 膜，在 Cu 膜的顶部形成了薄的 Cr 层。