Flexible Photodetectors with High Responsivity and Broad Spectral Response Employing Ternary SnxCd1–xS Micronanostructures,ACS Applied Electronic Materials

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Flexible Photodetectors with High Responsivity and Broad Spectral Response Employing Ternary SnxCd1–xS Micronanostructures
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-08-31 , DOI: 10.1021/acsaelm.1c00607
Muhammad Zubair Nawaz ₁ , Liu Xu ₁ , Xing Zhou ₁ , Khizar Hussain Shah ₁ , Muhammad Yaqub ₂ , Jiale Wang ₁ , Binhe Wu ₁ , Chunrui Wang ₁

Affiliation

Ultrasensitive, fast response, and broad spectral response flexible photodetectors (FPDs) would be desirable for advanced technology. Here, high purity tin cadmium sulfide (Sn_xCd_1–xS) micronanostructures (nanobelts, tapered nanobelts with/without hexagonal tips, nanorods, nanocombs, and nanoflowers) were grown via a facile one-step chemical vapor deposition (CVD) route and utilized for fabrication of metal–semiconductor–metal (MSM) rigid/flexible nanodevices. Compared to pristine CdS nanobelts, the Raman spectrum of Sn_xCd_1–xS nanobelts exhibits a 3 cm^–1 red shift at room temperature. The temperature-dependent intensity ratio (I_2LO/I_1LO) varies from 1.21 to 1.89, reflecting improved electron–lattice interaction in the Sn_xCd_1–xS nanobelts. In addition, a ternary nanobelt based rigid device sensitively responds to UV-Vis light with high responsivity (4.82 × 10¹ A/W), high external quantum efficiency (1.46 × 10⁴%), and fast response speed (20 ms). Compared to pristine CdS nanobelt devices, it responds to a broader spectral range while maintaining outstanding photoconductive characteristics. Additionally, Sn_xCd_1–xS nanobelt FPDs exhibited good mechanical and electrical stabilities with a performance comparable to those of rigid devices. The result indicates that the ternary Sn_xCd_1–xS micronanostructures may be an excellent candidate to enhance the optoelectronic performances of micro/nanodevices.

中文翻译：

采用三元 SnxCd1-xS 微纳米结构的具有高响应度和宽光谱响应的柔性光电探测器

超灵敏、快速响应和宽光谱响应的柔性光电探测器 (FPD) 是先进技术所需要的。在这里，高纯度硫化镉锡 (Sn _x Cd _{1– x} S) 微纳米结构（纳米带、带/不带六边形尖端的锥形纳米带、纳米棒、纳米梳和纳米花）通过简单的一步化学气相沉积 (CVD) 路线生长并用于制造金属-半导体-金属（MSM）刚性/柔性纳米器件。与原始的 CdS 纳米带相比，Sn _x Cd _{1– x} S 纳米带的拉曼光谱在室温下表现出 3 cm ^{–1 的}红移。温度依赖性强度比（I _2LO /I _1LO ) 从 1.21 到 1.89 不等，反映了 Sn _x Cd _{1– x} S 纳米带中电子-晶格相互作用的改善。此外，基于三元纳米带的刚性器件对紫外-可见光具有高响应度（4.82 × 10 ¹ A/W）、高外量子效率（1.46 × 10 ⁴ %）和快速响应速度（20 ms）。与原始的 CdS 纳米带器件相比，它响应更宽的光谱范围，同时保持出色的光电导特性。此外，Sn _x Cd _{1– x}S 纳米带 FPD 表现出良好的机械和电稳定性，其性能可与刚性器件相媲美。结果表明，三元 Sn _x Cd _{1– x} S 微纳米结构可能是提高微/纳米器件光电性能的极好候选者。

更新日期：2021-09-28

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