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Spectroscopic Assessment of Charge-Carrier Mobility in Crystalline Organic Semiconductors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-09-01 , DOI: 10.1002/aelm.202100579
Oleg G. Kharlanov 1, 2 , Dmitry R. Maslennikov 1, 2 , Elizaveta V. Feldman 1 , George G. Abashev 3, 4 , Oleg V. Borshchev 5 , Sergey A. Ponomarenko 5 , Mikhail V. Vener 2, 6, 7 , Dmitry Yu. Paraschuk 1, 2 , Andrey Yu. Sosorev 1, 2, 8
Affiliation  

Further progress in organic electronics demands new highly efficient organic semiconductor (OS) materials. So far, however, band-like charge transport with high mobilities has been reliably demonstrated only in a few OSs, and development of efficient methods for search of high-mobility materials among a plethora of OSs remains extremely important. In the present work, a spectroscopic method is presented for screening of crystalline OSs with efficient charge transport, to be used prior to time-consuming device measurements. Specifically, the work focuses on a physical rationale and an experimental benchmark of a correlation between the intensities of the low-frequency Raman spectrum and the strength of dynamic disorder limiting the charge-carrier mobility in a material. As a result, two physics-inspired spectroscopic descriptors for charge-carrier mobility estimation are suggested, both of which clearly correlate with device mobilities reported for various crystalline OSs. It is anticipated that the spectroscopic method based on these descriptors can serve as a powerful search tool for revealing new high-mobility OS materials.

中文翻译:

晶体有机半导体中载流子迁移率的光谱评估

有机电子学的进一步发展需要新的高效有机半导体 (OS) 材料。然而,到目前为止,仅在少数操作系统中可靠地证明了具有高迁移率的带状电荷传输,并且开发用于在众多操作系统中搜索高迁移率材料的有效方法仍然极为重要。在目前的工作中,提出了一种光谱方法,用于筛选具有有效电荷传输的晶体 OS,在耗时的设备测量之前使用。具体而言,该工作侧重于低频拉曼光谱强度与限制材料中电荷载流子迁移率的动态无序强度之间相关性的物理原理和实验基准。其结果,提出了两个用于电荷载流子迁移率估计的受物理学启发的光谱描述符,这两者都与报告的各种晶体 OS 的器件迁移率明显相关。预计基于这些描述符的光谱方法可以作为揭示新的高迁移率 OS 材料的强大搜索工具。
更新日期:2021-09-01
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