Thermal laser evaporation (TLE) is a particularly promising technique for the growth of metal films. Here, we demonstrate that TLE is also suitable for the growth of amorphous and polycrystalline oxide films. We report on a spectrum of binary oxide films that have been deposited by laser-induced evaporation of elemental metal sources in oxygen–ozone atmospheres. The oxide deposition by TLE is accompanied by an oxidation of the elemental metal source, which systematically affects the source molecular flux. Fifteen elemental metals were successfully used as sources for oxide films grown on unheated substrates, employing one and the same laser optic. The source materials ranged from refractory metals with low vapor pressures, such as Hf, Mo, and Ru, to Zn, which readily sublimates at low temperatures. These results reveal that TLE is also well suited for the growth of ultraclean oxide films.

中文翻译：

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用于生长氧化膜的热激光蒸发

热激光蒸发 (TLE) 是一种特别有前途的金属薄膜生长技术。在这里，我们证明了 TLE 也适用于非晶和多晶氧化物薄膜的生长。我们报告了通过激光诱导蒸发元素金属源在氧 - 臭氧气氛中沉积的一系列二元氧化物薄膜。TLE 的氧化物沉积伴随着元素金属源的氧化，这会系统地影响源分子通量。15 种元素金属被成功用作在未加热基板上生长的氧化物膜的来源，使用一种和相同的激光光学元件。源材料包括具有低蒸气压的难熔金属，如 Hf、Mo 和 Ru，以及在低温下容易升华的 Zn。