We have presented experimental results addressing the origin of spin valve (SV) magneto-resistance (MR), in both injection and tunnel conduction regimes, in our fabricated Fe₃O₄ (111)/Alq₃/Co SV device. Experimental evidences have shown that any alternative MR process, such as ‘tunneling anisotropic MR’ is not at the origin of this SV MR. Spin resolved density of states of electrodes indicate that both the conduction mechanisms induce different spin dependent scattering which inturn modify the MR signal of the device. This modification helped in maintaining a non-monotonous quenching of MR signal with increase in temperature. We have also proposed a phenomenological model for device operation where the concept of charge gap modification at Fermi level across Verwey transition is envisaged to offer this unique scenario of tuning the conduction mode and hence MR in this ferrite based organic SV. The model is also supported by an established theoretical study which considers high temperature phonon assisted tunneling through defect states at electrode–organic interface of the device.

我们已经展示了实验结果，在我们制造的 Fe ₃ O ₄ (111)/Alq _{3 中}解决了自旋阀 (SV) 磁阻 (MR) 的起源，在注入和隧道传导机制中/Co SV 设备。实验证据表明，任何替代的 MR 过程，例如“隧道各向异性 MR”，都不是这种 SV MR 的起源。自旋分辨的电极状态密度表明，两种传导机制都会引起不同的自旋相关散射，进而改变器件的 MR 信号。这种修改有助于保持 MR 信号随温度升高的非单调猝灭。我们还提出了一个用于器件操作的现象学模型，其中设想了跨越 Verwey 跃迁在费米能级上修改电荷间隙的概念，以提供这种独特的调节传导模式的场景，从而在这种基于铁氧体的有机 SV 中调节 MR。