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A Fully Integrated 10-V Pulse Driver Using Multiband Pulse-Frequency Modulation in 65-nm CMOS
IEEE Transactions on Very Large Scale Integration (VLSI) Systems ( IF 2.8 ) Pub Date : 2021-07-08 , DOI: 10.1109/tvlsi.2021.3092066
Jiangchao Wu 1 , Hou-Man Leong 1 , Yang Jiang 1 , Man-Kay Law 1 , Pui-In Mak 1 , Rui P. Martins 1
Affiliation  

This brief describes a fully integrated 10-V pulse driver. It comprises a four-stage switched-capacitor voltage multiplier (SCVM) and a dedicated high-voltage output driver (HVOD) with multiband pulse-frequency modulation (MPFM) to generate efficiently 10 V regulated output pulses. Specifically, an analog/digital hybrid-controlled current-starved ring oscillator (HCRO) modulates the switching frequencies at distinct bands to regulate the high-voltage (HV) supply for the HVOD, while enabling fast output transitions with an improved driving efficiency. Prototyped in 65-nm bulk CMOS, the driver demonstrates 10-V pulse generations over a 0.1-to-1-MHz range for a 15 pF//50 kΩ\text{k}\Omega load. With the proposed MPFM, this work measures an overall driving efficiency of up to 19.9%, corresponding to a ∼1.6×\sim 1.6\times improvement over prior arts. The measured output rise time of 119 ns is also ~25% faster when compared with using the conventional pulse-frequency modulation (PFM) scheme.

中文翻译:


在 65 nm CMOS 中使用多频带脉冲频率调制的完全集成 10V 脉冲驱动器



本简介介绍了完全集成的 10V 脉冲驱动器。它包括一个四级开关电容器电压倍增器 (SCVM) 和一个具有多频带脉冲频率调制 (MPFM) 功能的专用高压输出驱动器 (HVOD),可有效生成 10 V 稳压输出脉冲。具体来说,模拟/数字混合控制的电流匮乏环形振荡器 (HCRO) 在不同频段调制开关频率,以调节 HVOD 的高压 (HV) 电源,同时实现快速输出转换并提高驱动效率。该驱动器采用 65 nm 体 CMOS 原型设计,可在 15 pF//50 kΩ\text{k}\Omega 负载下在 0.1 至 1 MHz 范围内生成 10 V 脉冲。通过所提出的 MPFM,这项工作测得的整体驱动效率高达 19.9%,相当于现有技术的 ∼1.6×\sim 1.6\times 改进。与使用传统脉冲频率调制 (PFM) 方案相比,测得的输出上升时间为 119 ns,也快了约 25%。
更新日期:2021-07-08
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